View SIZ728DT-T1-GE3_3131036.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

vishay siliconix siz728dt new product document number: 67694 s11-0608-rev. a, 04-apr-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 25 v (d-s) mosfets ordering information: siz72 8 dt-t1-ge3 (lead (p b )-free and halogen-free) g 1 g 2 s 2 s 2 d 1 d 1 1 6 5 4 2 3 3.73 mm 6.00 mm powerpair ? 6 x 3.7 d 1 s 1 /d 2 pin 1 g hs g ls g n d g n d v i n v i n 1 6 5 4 2 3 v i n v sw v in /d 1 gnd/s 2 n-channel 2 mosfet n-channel 1 mosfet g hs / g 1 v s w / s 1 /d 2 g ls / g 2 notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpair is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation pr ocess in manufacturing. a solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 67 c/ w for channel-1 and 65 c/ w for channel-2. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol channel-1 channel-2 unit drain-source voltage v ds 25 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 16 a 35 a a t c = 70 c 16 a 35 a t a = 25 c 16 a, b, c 28.8 b, c t a = 70 c 14.2 b, c 23 b, c pulsed drain current (t = 300 s) i dm 70 100 continuous source drain diode current t c = 25 c i s 16 a 35 a t a = 25 c 3.2 b, c 3.8 b, c single pulse avalanche current l = 0.1 mh i as 18 30 single pulse avalanche energy e as 16 45 mj maximum power dissipation t c = 25 c p d 27 48 w t c = 70 c 17 31 t a = 25 c 3.9 b, c 4.6 b, c t a = 70 c 2.5 b, c 3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol channel-1 channel-2 unit typ. max. typ. max. maximum junction-to-ambient b, f t 10 s r thja 24 32 20 27 c/ w maximum junction-to-case (drain) steady state r thjc 3.5 4.6 2 2.6 product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) channel-1 25 0.0077 at v gs = 10 v 16 a 8.1 nc 0.0110 at v gs = 4.5 v 16 a channel-2 25 0.0035 at v gs = 10 v 35 a 20.5 nc 0.0048 at v gs = 4.5 v 35 a features ? halo g en-free accordin g to iec 61249-2-21 definition ? trenchfet ? power mosfets ? 100 % r g tested ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? system power - notebook - server ? pol ? synchronous buck converter
www.vishay.com 2 document number: 67694 s11-0608-rev. a, 04-apr-11 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a ch-1 25 v v gs = 0 v, i d = 250 a ch-2 25 v ds temperature coefficient v ds /t j i d = 250 a ch-1 34 mv/c i d = 250 a ch-2 25 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a ch-1 - 5 i d = 250 a ch-2 - 5.4 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a ch-1 1 2.2 v v ds = v gs , i d = 250 a ch-2 1 2.2 gate source leakage i gss v ds = 0 v, v gs = 20 v ch-1 100 na ch-2 100 zero gate voltage drain current i dss v ds = 25 v, v gs = 0 v ch-1 1 a v ds = 25 v, v gs = 0 v ch-2 1 v ds = 25 v, v gs = 0 v, t j = 55 c ch-1 5 v ds = 25 v, v gs = 0 v, t j = 55 c ch-2 5 on-state drain current b i d(on) v ds 5 v, v gs = 10 v ch-1 15 a v ds 5 v, v gs = 10 v ch-2 20 drain-source on-state resistance b r ds(on) v gs = 10 v, i d = 18 a ch-1 0.0063 0.0077 v gs = 10 v, i d = 20 a ch-2 0.0029 0.0035 v gs = 4.5 v, i d = 15 a ch-1 0.0088 0.0110 v gs = 4.5 v, i d = 20 a ch-2 0.0039 0.0048 forward transconductance b g fs v ds = 15 v, i d =18 a ch-1 37 s v ds = 15 v, i d = 20 a ch-2 80 dynamic a input capacitance c iss channel-1 v ds = 12.5 v, v gs = 0 v, f = 1 mhz channel-2 v ds = 12.5 v, v gs = 0 v, f = 1 mhz ch-1 890 pf ch-2 2360 output capacitance c oss ch-1 230 ch-2 580 reverse transfer capacitance c rss ch-1 105 ch-2 260 total gate charge q g v ds = 12.5 v, v gs = 10 v, i d = 15 a ch-1 17 26 nc v ds = 12.5 v, v gs = 10 v, i d = 20 a ch-2 42.5 64 channel-1 v ds = 12.5 v, v gs = 4.5 v, i d = 15 a channel-2 v ds = 12.5 v, v gs = 4.5 v, i d = 20 a ch-1 8.1 13 ch-2 20.5 17 gate-source charge q gs ch-1 3 ch-2 7.7 gate-drain charge q gd ch-1 2.5 ch-2 6.4 gate resistance r g f = 1 mhz ch-1 0.2 1 2 ch-2 0.2 0.8 1.6
document number: 67694 s11-0608-rev. a, 04-apr-11 www.vishay.com 3 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 12.5 v, r l = 1.25 i d ? 10 a, v gen = 4.5 v, r g = 1 channel-2 v dd = 12.5 v, r l = 1.25 i d ? 10 a, v gen = 4.5 v, r g = 1 ch-1 12 25 ns ch-2 20 40 rise time t r ch-1 15 30 ch-2 18 35 turn-off delay time t d(off) ch-1 15 30 ch-2 30 60 fall time t f ch-1 10 20 ch-2 10 20 tu r n - o n d e l ay t i m e t d(on) channel-1 v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 channel-2 v dd = 15 v, r l = 1.5 i d ? 10 a, v gen = 10 v, r g = 1 ch-1 7 15 ch-2 10 20 rise time t r ch-1 12 25 ch-2 12 25 turn-off delay time t d(off) ch-1 25 50 ch-2 30 60 fall time t f ch-1 10 20 ch-2 10 20 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c ch-1 16 a ch-2 35 pulse diode forward current a i sm ch-1 70 ch-2 100 body diode voltage v sd i s = 10 a, v gs = 0 v ch-1 0.8 1.2 v i s = 10 a, v gs = 0 v ch-2 0.78 1.2 body diode reverse recovery time t rr channel-1 i f = 10 a, di/dt = 100 a/s, t j = 25 c channel-2 i f = 10 a, di/dt = 100 a/s, t j = 25 c ch-1 12 25 ns ch-2 25 50 body diode reverse recovery charge q rr ch-1 4 8 nc ch-2 15 30 reverse recovery fall time t a ch-1 6.6 ns ch-2 12.5 reverse recovery rise time t b ch-1 5.5 ch-2 12.5
www.vishay.com 4 document number: 67694 s11-0608-rev. a, 04-apr-11 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate char g e 0 10 20 30 40 50 60 70 0.0 0.5 1.0 1.5 2.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 4 v v gs = 10 v thru 5 v v gs = 3 v 0.0040 0.0060 0.0080 0.0100 0.0120 0.0140 0.0160 0 10 20 30 40 50 60 70 r ds(on) - on-resistance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 3 6 9 12 15 18 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 7.5 v i d = 20 a v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 125 c t c = - 55 c t= 25 c c 0 200 400 600 800 1000 1200 0 5 10 15 20 25 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) i d = 18 a v gs = 4.5 v v gs = 10 v
document number: 67694 s11-0608-rev. a, 04-apr-11 www.vishay.com 5 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) source-drain diode forward volta g e threshold volta g e 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 25 c t j = 150 c 1.0 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance vs. gate-to-source volta g e sin g le pulse power 0 0.005 0.010 0.015 0.020 0.025 0.030 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 18 a 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operatin g area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 10 s 100 s 100 ms limited by r ds(on) * 1 ms t single pulse a = 25 c bvdss limited 10 ms 1 s dc
www.vishay.com 6 document number: 67694 s11-0608-rev. a, 04-apr-11 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current deratin g * 0 10 20 30 40 50 60 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power, junction-to-case 0 5 10 15 20 25 30 25 50 75 100 125 150 power (w) t c - case temperature ( c)
document number: 67694 s11-0608-rev. a, 04-apr-11 www.vishay.com 7 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-1 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 67 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
www.vishay.com 8 document number: 67694 s11-0608-rev. a, 04-apr-11 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate char g e 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0.0020 0.0025 0.0030 0.0035 0.0040 0.0045 0.0050 0 20 40 60 80 100 r ds(on) - on-resistance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0 2 4 6 8 10 0 10 20 30 40 50 v gs - gate-to-source voltage (v) q g - total gate charge (nc) i d = 20 a v ds = 24 v v ds = 7.5 v v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v gs - gate-to-source voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 r ds(on) -on-resistance (normalized) t j - junction temperature ( c) i d = 20 a v gs = 4.5 v, 10 v
document number: 67694 s11-0608-rev. a, 04-apr-11 www.vishay.com 9 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) source-drain diode forward volta g e threshold volta g e 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 25 c t j = 150 c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance vs. gate-to-source sin g le pulse power 0.000 0.002 0.004 0.006 0.008 0.010 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 20 a 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 power (w) time (s) safe operatin g area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 10 s 100 s 100 ms limited by r ds(on) * 1 ms t single pulse a = 25 c bvdss limited 10 ms 1 s dc
www.vishay.com 10 document number: 67694 s11-0608-rev. a, 04-apr-11 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. current deratin g * 0 20 40 60 80 100 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power, junction-to-case 0 10 20 30 40 50 25 50 75 100 125 150 power (w) t c - case temperature ( c)
document number: 67694 s11-0608-rev. a, 04-apr-11 www.vishay.com 11 vishay siliconix siz728dt new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 channel-2 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67694 . normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
document number: 69028 www.vishay.com 17-nov-08 1 package information vishay siliconix powerpair tm 6 x 3.7 case outline a1 e pin 1 b 1 z z pin 3 pin 2 pin 6 pin 5 pin 4 a k1 b e d1 e2 k2 l k k2 d1 e1 back side v iew d 0.10 c 2x 0.10 c 0.0 8 c pin #1 ident (optional) a 0.10 c 2x c c pin 4 pin 5 pin 6 pin 3 pin 2 pin 1 millimeters inches dim. min. nom. max. min. nom. max. a 0.70 0.75 0.80 0.028 0.030 0.032 a1 0.00 - 0.05 0.000 - 0.002 b 0.46 0.51 0.56 0.018 0.020 0.022 b1 0.20 0.25 0.38 0.008 0.010 0.015 c 0.18 0.20 0.23 0.007 0.008 0.009 d 3.65 3.73 3.81 0.144 0.147 0.150 d1 2.41 2.53 2.65 0.095 0.100 0.104 e 5.92 6.00 6.08 0.233 0.236 0.239 e1 2.62 2.67 2.72 0.103 0.105 0.107 e2 0.87 0.92 0.97 0.034 0.036 0.038 e 1.27 bsc 0.05 bsc k 0.45 typ. 0.018 typ. k1 0.66 typ. 0.026 typ. k2 0.60 typ. 0.024 typ. l 0.38 0.43 0.48 0.015 0.017 0.019 ecn: s-82772-rev. b, 17-nov-08 d w g: 5979
document number: 65278 www.vishay.com revision: 04-aug-09 1 pad pattern vishay siliconix recommended pad for powerpair? 6 x 3.7 0.0170 (0.432) recommended pad for po w erpair 6 x 3.7 dimensions in inches (mm) keep-o u t 0.3520 ( 8 .94) x 0.4390 (11.151) 0.3520 ( 8 .941) 0.0220 (0.559) 0, 0.11 0.0190 (0.4 8 3) 0.1040 (2.642) 0, 0.03 0, 0 0.4390 (11.151) 0.1070 (2.71 8 ) 0.0220 (0.559) 0.0170 (0.432) 0.03 8 0 (0.965) 0, - 0.0645 - 0.05, - 0.11 0, - 0.11 0.0500 (1.27) 1
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

▲Up To Search▲

Price & Availability of SIZ728DT-T1-GE3

	To Download SIZ728DT-T1-GE3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .